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PD57030-E |
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| Part Number | PD57030-E |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V... |
| Features |
■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance ... |
| Document |
 PD57030-E Data Sheet
PDF 474.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PD57030 |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 2 | PD57030S |
STMicroelectronics |
RF POWER TRANSISTORS |
|
| 3 | PD57002-E |
STMicroelectronics |
RF POWER transistor |
|
| 4 | PD57006-E |
STMicroelectronics |
RF POWER transistor |
|
| 5 | PD57006S-E |
STMicroelectronics |
RF POWER transistor |
|