NXP BUW fiche technique

No.	Partie #	Fabricant	Description
1	BUW84	NXP	Silicon diffused power transistors tive load; see Fig.11 open base − − − − − − 0.4 400 450 1 2 3 50 − V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 − − 800 1000 V V CONDITIONS TYP. MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth j-a PARAMETER thermal resistanc
2	BUW11AF	NXP	Silicon diffused power transistors d 4 tp < 20 ms; see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 8 and 9 3 2.5 5 10 32 0.8 A A A A W µs open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 14 2 Philips Se
3	BUW11AW	NXP	Silicon diffused power transistors s PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W 1997 Aug 14 1 Philips Semiconductors Pro
4	BUW11F	NXP	Silicon diffused power transistors d 4 tp < 20 ms; see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 8 and 9 3 2.5 5 10 32 0.8 A A A A W µs open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 14 2 Philips Se
5	BUW12AF	NXP	Silicon diffused power transistors 5 see Fig 2 Th ≤ 25 °C; see Fig.4 6 5 8 20 34 A A A A W µs see Figs 6 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT resistive load; see Figs 12 and 13 0.8 1997 Aug 14 2 Phili
6	BUW12W	NXP	Silicon diffused power transistors 8 20 125 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W 1997 Aug 14 1 Phil
7	BUW13AW	NXP	Silicon diffused power transistors 00 450 1.5 15 30 175 0.8 V V V A A W µs VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 0.7 UNIT K/W 1997 Aug 13 1 Philips Semiconductors Product
8	BUW85	NXP	Silicon diffused power transistors tive load; see Fig.11 open base − − − − − − 0.4 400 450 1 2 3 50 − V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 − − 800 1000 V V CONDITIONS TYP. MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth j-a PARAMETER thermal resistanc
9	BUW11W	NXP	Silicon diffused power transistors s PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W 1997 Aug 14 1 Philips Semiconductors Pro
10	BUW12AF	NXP	Silicon diffused power transistors 5 see Fig 2 Th ≤ 25 °C; see Fig.4 6 5 8 20 34 A A A A W µs see Figs 6 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT resistive load; see Figs 12 and 13 0.8 1997 Aug 14 2 Phili
11	BUW12AW	NXP	Silicon diffused power transistors 8 20 125 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W 1997 Aug 14 1 Phil
12	BUW12F	NXP	Silicon diffused power transistors 5 see Fig 2 Th ≤ 25 °C; see Fig.4 6 5 8 20 34 A A A A W µs see Figs 6 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT resistive load; see Figs 12 and 13 0.8 1997 Aug 14 2 Phili
13	BUW13AF	NXP	Silicon diffused power transistors 4 tp < 20 ms; see Fig 4 Th ≤ 25 °C; see Fig.2 resistive load; see Fig.13 10 8 15 30 37 0.8 A A A A W µs see Figs 8 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 13 2
14	BUW13F	NXP	Silicon diffused power transistors 4 tp < 20 ms; see Fig 4 Th ≤ 25 °C; see Fig.2 resistive load; see Fig.13 10 8 15 30 37 0.8 A A A A W µs see Figs 8 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 13 2
15	BUW13W	NXP	Silicon diffused power transistors 00 450 1.5 15 30 175 0.8 V V V A A W µs VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 0.7 UNIT K/W 1997 Aug 13 1 Philips Semiconductors Product
16	BUW14	NXP	Silicon Diffused Power Transistor alue Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 0.5 1 0.2 0.3 0.3 20 150 150 UNIT V V A A A A A W ˚C ˚C Tmb