BUW13W |
Part Number | BUW13W |
Manufacturer | NXP (https://www.nxp.com/) |
Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. ge BUW13W; BUW13AW APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING ... |
Features |
00 450 1.5 15 30 175 0.8 V V V A A W µs VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 0.7 UNIT K/W
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW13W BUW13AW VCEO collector-emitter voltage BUW13W BUW13AW IC ICM IB IBM Ptot Tstg Tj collector current (DC) collector current (peak value) base current (DC) base ... |
Document |
BUW13W Data Sheet
PDF 79.20KB |
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