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BUW12AW |
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| Part Number | BUW12AW |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 DESCRIPTION... |
| Features |
8 20 125 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW12W BUW12AW VCEO collector-emitter voltage BUW12W BUW12AW IC ICM IB IBM Ptot Tstg Tj collector current (DC) collector current (peak val... |
| Document |
 BUW12AW Data Sheet
PDF 79.20KB |
| Distributor | Stock | Price | Buy |
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