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BUW11F |
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| Part Number | BUW11F |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPT... |
| Features |
d 4 tp < 20 ms; see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 8 and 9 3 2.5 5 10 32 0.8 A A A A W µs open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC ... |
| Document |
 BUW11F Data Sheet
PDF 88.47KB |
| Distributor | Stock | Price | Buy |
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