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BUW11W |
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| Part Number | BUW11W |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e BUW11W; BUW11AW APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. MBB008 2... |
| Features |
s PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW11W BUW11AW VCEO collector-emitter voltage BUW11W BUW11AW ICsat collector saturation current BUW11W BUW11AW IC ICM IB IBM Ptot Tstg Tj collector current (DC) ... |
| Document |
 BUW11W Data Sheet
PDF 79.25KB |
| Distributor | Stock | Price | Buy |
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