BUW13F NXP Silicon diffused power transistors Datasheet, en stock, prix

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BUW13F

NXP
BUW13F
BUW13F BUW13F
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Part Number BUW13F
Manufacturer NXP (https://www.nxp.com/)
Description High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPT...
Features 4 tp < 20 ms; see Fig 4 Th ≤ 25 °C; see Fig.2 resistive load; see Fig.13 10 8 15 30 37 0.8 A A A A W µs see Figs 8 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 13 2 Philips Semiconductors Product specification Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating Sy...

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