| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Motorola |
MTP30N08M |
|
|
|
|
Motorola Inc |
UHF POWER TRANSISTOR haracteristic Thermal Resistance, Junction to Case (1) at 70°C Case Symbol RθJC Max 7.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown |
|
|
|
|
Motorola Inc |
UHF POWER TRANSISTOR NPN SILICON high impedances and is easy to match. • Motorola Advanced Amplifier Concept Package • Oxynitride Passivation • Specified 26 Volts, 960 MHz Characteristics Output Power = 45 Watts Minimum Gain = 8.0 dB Efficiency = 50% • Circuit board photomaster avai |
|
|
|
|
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
|
|
|
Motorola |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM ® D CASE |
|
|
|
|
Motorola Inc |
RF POWER TRANSISTOR input and output matching networks and high impedances. It can easily operate in a full 870 – 960 MHz bandwidth in a simple circuit. • Class AB Operation • Specified 26 Volts, 960 MHz Characteristics Output Power — 5 Watts Gain — 9 dB min Efficiency — |
|
|
|
|
Motorola Inc |
UHF Power Transistor |
|
|
|
|
Motorola Inc |
NPN SILICON UHF POWER TRANSISTOR 1) Collector –Emitter Breakdown Voltage (IC = 10 mA, RBE = 75 Ohms) Collector –Emitter Leakage (VCE = 26 V, RBE = 75 Ohms) Emitter –Base Breakdown Voltage (IC = 5.0 mAdc) Emitter –Base Leakage (VBE = 2.5 V) V(BR)CER ICER V(BR)EBO IEBO 40 — 3.5 — — — — — |
|
|
|
|
Motorola Inc |
RF POWER TRANSISTOR THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 3.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitte |
|
|
|
|
Motorola |
Power MOSFET |
|
|
|
|
Motorola |
Power MOSFET |
|
|
|
|
Motorola |
TMOS POWER FET o –Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS ® D G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage |
|
|
|
|
Motorola |
Power Field Effect Transistor |
|
|
|
|
Motorola |
Power Field Effect Transistor |
|
|
|
|
Motorola |
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and V |
|
|
|
|
Motorola |
Power Field Effect Transistor |
|
|
|
|
Motorola |
UHF Power Transistor |
|
|
|
|
Motorola Inc |
UHF LINEAR POWER TRANSISTOR S Collector –Emitter Breakdown Voltage (IC = 10 mA, RBE = 75 Ohms) Collector –Emitter Leakage (VCE = 26 V, RBE = 75 Ohms) Emitter –Base Breakdown Voltage (IC = 5.0 mAdc, IC = 0) Emitter –Base Leakage (VBE = 2.5 V) V(BR)CER ICER V(BR)EBO IEBO 40 — 3.5 — — |
|
|
|
|
Motorola |
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and V |
|
|
|
|
Motorola |
TMOS POWER FET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and V |
|