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MTP30P06V |
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| Part Number | MTP30P06V |
| Manufacturer | Motorola |
| Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30P06V/D Designer's TMOS V Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a ne... |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous Gate –to –Source Voltage — Non –repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Dra... |
| Document |
 MTP30P06V Data Sheet
PDF 325.35KB |
| Distributor | Stock | Price | Buy |
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