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TP3032 |
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| Part Number | TP3032 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3032/D NPN Silicon RF Power Transistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifier... |
| Features |
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 3.3 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 30 mA, RBE = 75 Ω) Emitter –Base Breakdown Voltage (IE = 5 mAdc) Collector –Base Breakdown Voltage (IC = 30 mAdc) Collector –Emitter Leakage (VCE = 26 V, RBE = 75 Ω) V(BR)CER V(BR)EBO V(BR)CBO ICER 40 3.5 48 — — — — — — — — 8 Vdc Vdc Vdc mA ON CHARACTERISTICS DC Current Gain (IC =1 Adc, VCE = 10 Vdc) hFE 15 — 80 — (continued... |
| Document |
 TP3032 Data Sheet
PDF 117.83KB |
| Distributor | Stock | Price | Buy |
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