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MTP3N50E |
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| Part Number | MTP3N50E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motorola Preferred Device N–Channel Enhancement–Mode Si... |
| Features |
o –Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS ® D G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –repetitive (tp ≤ 50 µs) Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 500 500 ± 20 ± 40 3.0 10 50 0.4 – 65 ... |
| Document |
 MTP3N50E Data Sheet
PDF 251.88KB |
| Distributor | Stock | Price | Buy |
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