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MTP30N06VL |
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| Part Number | MTP30N06VL |
| Manufacturer | Motorola |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area produc... |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous Gate –to –Source Voltage — Non –repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Curr... |
| Document |
 MTP30N06VL Data Sheet
PDF 207.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP30N06E |
Motorola Semiconductor |
TMOS Power FET |
|
| 2 | MTP30N06EL |
Motorola Semiconductor |
TMOS Power FET |
|
| 3 | MTP30N08M |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 4 | MTP30008 |
nELL |
Three-Phase Bridge Rectifier |
|
| 5 | MTP30010 |
nELL |
Three-Phase Bridge Rectifier |
|