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MTP3N100E |
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| Part Number | MTP3N100E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N100E/D Designer's www.DataSheet4U.com TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate ™ Dat... |
| Features |
–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM ® D CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation... |
| Document |
 MTP3N100E Data Sheet
PDF 175.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP3N100 |
Motorola |
Power MOSFET |
|
| 2 | MTP3N120E |
Motorola |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
|
| 3 | MTP3N25E |
Motorola |
TMOS POWER FET 3.0 AMPERES 250 VOLTS |
|
| 4 | MTP3N35 |
Fairchild Semiconductor |
N-Channel Power MOSFETs |
|
| 5 | MTP3N50 |
Motorola |
Power Field Effect Transistor |
|