| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
MOS TECH |
Dual 30 P-Channel Power MOSFET x –5.9 A, –30 V. RDS(ON) = m: @ VGS = –10 V RDS(ON) = m: @ VGS = – 4.5 V x Extended VGSS range ( –25V) for battery applications x ESD protection diode (note 3) x High performance trench technology for extremely low RDS(ON) x High power and curre |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SO-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 6.6A 32@ VGS=10V 43@ VGS=4.5V NOTE：The MT4936 is available in a lead-free package D1 G1 |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET rDS(on) = 4.5mΩ, VGS = 10V, ID = 18A rDS(on) = 6.5mΩ, VGS = 4.5V, ID = 17A High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability General Description This N-Channel MOSFET ha |
|
|
|
|
MOS-TECH |
MOSFET • Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V • Q2: P-Channel –3.5 A, –60 V RDS(on) = 70 mΩ @ VGS = –10V RDS(on) = 81 mΩ @ VGS = –4.5V • RoHS Compliant DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Absolute Ma |
|
|
|
|
MOS-TECH |
P-Channel MOSFET Max rDS(on) = 13m:VGS = -10V, ID = -12A Max rDS(on) = 20m:VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET rDS(on) = 6.8mΩ, VGS = 10V, ID = 15A rDS(on) = 9.3mΩ, VGS = 4.5V, ID = 14A High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability General Description This N-Channel MOSFET ha |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package NOTE：The MT4408L is available in a lead-free package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 20A 25@ VGS=4.5V 38@ VGS=2.5V S G |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package NOTE：The MT4435L is available in a lead-free package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 98@ VGS=-10V -30V -15 130 @ VGS=-4.5V |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -8A 15@ VGS=-10V 20@ VGS=-4.5V NOTE：The MT4435BDY is available in a lead-free package |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET This P-Channel MOSFET is producted using0RVWHFK Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications com |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching |
|
|
|
|
MOS-TECH |
Dual N-Channel Powe MOSFET Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% |
|
|
|
|
matrix microtech |
Dual P-Channel High Density Trench MOSFET -30V/-4.9A, RDS(ON) = 65mΩ @ VGS = -10V -30V/-3.6A, RDS(ON) = 105mΩ @ VGS = -4.5V Super high dense cell trench design for low RDS(ON) Rugged and reliable SOP-8 package design ¾ ¾ ¾ ¾ APPLICATIONS POWER Management in Note Portable Equipment Batter |
|
|
|
|
Mos-Tech |
30V P-Channel PowerTrench MOSFET • –8.8 A, –30 V RDS(ON) = 20 mΩ @ V GS = –10 V RDS(ON) = 35 mΩ @ V GS = –4.5 V M O S - T E C S HE M I C O N D U C T O R • Low gate charge (17nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High po |
|
|
|
|
MOS-TECH |
Dual N-Channel Power MOSFET x Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.5 A, 30V RDS(on) =18 m: @ VGS = 10V RDS(on) =25 m: @ VGS = 4.5V x Q1: Optimized for low switc |
|
|
|
|
Matrix Microtech |
P & N-Channel 60-V(D-S) MOSFET APPLICATIONS ¾ 60V/4.5A, RDS(ON) = 58mΩ @ VGS = 10V ¾ 60V/4.0A, RDS(ON) = 85mΩ @ VGS = 4.5V ¾ -60V/-3.5A, RDS(ON) = 90mΩ @ VGS = -10V ¾ -60V/-3.0A, RDS(ON) =135mΩ @ VGS = -4.5V ¾ Fast switching speed ¾ SOP-8 & TO-252 package design ¾ Power Manag |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -8A 15@ VGS=-10V 22 @ VGS=-4.5V NOTE：The MT4435A is available in a lead-free package |
|
|
|
|
Mos-tech Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -5.3A 46@ VGS=-10V 78 @ VGS=-4.5V NOTE：The MT4953 is available in a lead-free package |
|
|
|
|
Mos-Tech |
P-Channel Enhancement Mode Field Effect Transistor ● ● ● ● Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252 package PRODUCT SUMMARY VDSS -30V ID -7A RDS(ON) (mΩ) Typ 98@ VGS=-10V 130 @ VGS=-4.5V D S NOTE：The MT4435L2 is available in a lead-free |
|
|
|
|
Matrix Microtech |
P-Channel Enhancement Mode MOSFET -30V/-8A, RDS(ON) = 20mΩ @ VGS = -10V SO-8 package design Simple Drive Requirement Low On-resistance Fast Switching ¾ ¾ ¾ ¾ ¾ APPLICATIONS POWER Management in Note Portable Equipment Battery Powered System DC/DC Converter Load Switch PIN CONF |
|