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MT4435BDY |
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| Part Number | MT4435BDY |
| Manufacturer | MOS-TECH |
| Description | Mos-Tech Semiconductor Co.,LTD. MT4435BDY P-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requiremen... |
| Features |
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -8A 15@ VGS=-10V 20@ VGS=-4.5V NOTE：The MT4435BDY is available in a lead-free package G ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 ℃ Symbol VDS VGS ID Limit -30 ±25 -8 - Pulse d b IDM -40 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -2.4 2.5 -55 to ... |
| Document |
 MT4435BDY Data Sheet
PDF 252.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT4435 |
Mos-Tech |
30V P-Channel PowerTrench MOSFET |
|
| 2 | MT4435 |
Matrix Microtech |
P-Channel Enhancement Mode MOSFET |
|
| 3 | MT4435A |
MOS-TECH |
P-Channel Power MOSFET |
|
| 4 | MT4435L |
MOS-TECH |
P-Channel Power MOSFET |
|
| 5 | MT4435L2 |
Mos-Tech |
P-Channel Enhancement Mode Field Effect Transistor |
|