MT4976 |
Part Number | MT4976 |
Manufacturer | MOS-TECH |
Description | This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for su... |
Features |
• Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V • Q2: P-Channel –3.5 A, –60 V RDS(on) = 70 mΩ @ VGS = –10V RDS(on) = 81 mΩ @ VGS = –4.5V • RoHS Compliant DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junct... |
Document |
MT4976 Data Sheet
PDF 535.44KB |
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