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MT4435L |
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| Part Number | MT4435L |
| Manufacturer | MOS-TECH |
| Description | Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT4435L FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ●... |
| Features |
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package NOTE：The MT4435L is available in a lead-free package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 98@ VGS=-10V -30V -15 130 @ VGS=-4.5V D G S ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -15 - Pulse d b IDM -24 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.8 50 -55 ... |
| Document |
 MT4435L Data Sheet
PDF 250.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT4435 |
Mos-Tech |
30V P-Channel PowerTrench MOSFET |
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| 2 | MT4435 |
Matrix Microtech |
P-Channel Enhancement Mode MOSFET |
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| 3 | MT4435A |
MOS-TECH |
P-Channel Power MOSFET |
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| 4 | MT4435BDY |
MOS-TECH |
P-Channel Power MOSFET |
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| 5 | MT4435L2 |
Mos-Tech |
P-Channel Enhancement Mode Field Effect Transistor |
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