MT4953 |
Part Number | MT4953 |
Manufacturer | Mos-tech Semiconductor |
Description | Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT4953 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● ... |
Features |
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -5.3A 46@ VGS=-10V 78 @ VGS=-4.5V NOTE:The MT4953 is available in a lead-free package S1 S2 G1 G2 D1 D2 ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -5.3 - Pulse d b IDM -24 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG... |
Document |
MT4953 Data Sheet
PDF 254.70KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | MT4953 |
matrix microtech |
Dual P-Channel High Density Trench MOSFET | |
2 | MT4953 |
ETC |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | MT4953A |
MOS TECH |
Dual 30 P-Channel Power MOSFET | |
4 | MT4914 |
MOS-TECH |
Dual N-Channel Power MOSFET | |
5 | MT4936 |
MOS-TECH |
N-Channel Power MOSFET |