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MT4966 |
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| Part Number | MT4966 |
| Manufacturer | MOS-TECH |
| Description | This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications Synchronous Re... |
| Features |
Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
ruggedness.
Applications
Synchronous Rectifier
Primary Switch For Bridge Topology
D2 D1 D1
D2
Pin 1
G2
S2 G1 S1
SO-8
D2 5 D2 6 D1 7... |
| Document |
 MT4966 Data Sheet
PDF 538.07KB |
| Distributor | Stock | Price | Buy |
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