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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS(ON) = 0.050Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs • 27A, 200V, rDS(ON) = 0.100Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 21A, 250V, rDS(ON) = 0.150Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 62A, 130V, rDS(ON) = 0.030Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 8A, 200V, rDS(ON) = 0.330Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 8A, 200V, rDS(ON) = 0.330Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 3A, 500V, rDS(ON) = 2.70Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Of |
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Intersil Corporation |
27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs • 27A, 200V, rDS(ON) = 0.100Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 21A, 250V, rDS(ON) = 0.150Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 11A, 500V, rDS(ON) = 0.530Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 24A, -100V, rDS(ON) = 0.140Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 70A (Note), 60V, rDS(ON) = 0.012Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS o |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs • 70A, 100V, rDS(ON) = 0.022Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 62A, 130V, rDS(ON) = 0.030Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS(ON) = 0.050Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 47A, -100V, rDS(ON) = 0.053Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 12A, 100V, rDS(ON) = 0.160Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 3A, 500V, rDS(ON) = 2.70Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Of |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 9A, -100V, rDS(ON) = 0.280Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs • 9A, -100V, rDS(ON) = 0.280Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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