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FSYC163R |
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| Part Number | FSYC163R |
| Manufacturer | Intersil Corporation |
| Description | FSYC163D, FSYC163R Data Sheet May 1999 File Number 4740 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hard... |
| Features |
• 62A, 130V, rDS(ON) = 0.030Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 12.5nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Symbol D G S Packaging SMD2 Ordering Information RAD LEVEL 10K 10K 100K 100K 10... |
| Document |
 FSYC163R Data Sheet
PDF 61.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FSYC163D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 2 | FSYC160D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
|
| 3 | FSYC160R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
|
| 4 | FSYC055D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 5 | FSYC055R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|