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FSYE430R |
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| Part Number | FSYE430R |
| Manufacturer | Intersil Corporation |
| Description | FSYE913A0D, FSYE913A0R Data Sheet February 2000 File Number 4744 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a ser... |
| Features |
• 9A, -100V, rDS(ON) = 0.280Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 1.5nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Packaging SMD.5 Ordering Information RAD LEVEL 10K 10K 100K 100K 10... |
| Document |
 FSYE430R Data Sheet
PDF 73.24KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FSYE430D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 2 | FSYE13A0D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 3 | FSYE13A0R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 4 | FSYE23A0D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 5 | FSYE23A0R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|