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FSYC260D |
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| Part Number | FSYC260D |
| Manufacturer | Intersil Corporation |
| Description | The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to ... |
| Features |
• 46A, 200V, rDS(ON) = 0.050Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 17nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV ... |
| Document |
 FSYC260D Data Sheet
PDF 48.84KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FSYC260R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 2 | FSYC264D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 3 | FSYC264R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 4 | FSYC055D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 5 | FSYC055R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|