FSYE23A0D |
Part Number | FSYE23A0D |
Manufacturer | Intersil Corporation |
Description | FSYE23A0D, FSYE23A0R Data Sheet May 1999 File Number 4742 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Ha... |
Features |
• 8A, 200V, rDS(ON) = 0.330Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 3.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Symbol D G S Packaging SMD.5 Ordering Information RAD LEVEL 10K 10K 100K 100K 100... |
Document |
FSYE23A0D Data Sheet
PDF 57.92KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FSYE23A0R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs | |
2 | FSYE13A0D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs | |
3 | FSYE13A0R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs | |
4 | FSYE430D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs | |
5 | FSYE430R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |