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FSYE430D |
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| Part Number | FSYE430D |
| Manufacturer | Intersil Corporation |
| Description | FSYE430D, FSYE430R Data Sheet June 1999 File Number 4750 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Har... |
| Features |
• 3A, 500V, rDS(ON) = 2.70Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 8nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2 - Usable to 3E13 Neutrons/cm2 Symbol D G S Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Co... |
| Document |
 FSYE430D Data Sheet
PDF 58.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FSYE430R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 2 | FSYE13A0D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 3 | FSYE13A0R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 4 | FSYE23A0D |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|
| 5 | FSYE23A0R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
|