| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID 800 0.45 11 V Ω A PG-TO220-3-31 |
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Infineon Technologies |
SPP11N65C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID P-TO262-3-1 P-TO220-3-31 650 0.38 11 |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 650 0 |
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Infineon |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances Product Summary VDS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A P-TO220-3-31 P-TO263-3-2 P-TO220-3 |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP11N60S5 SPI11N60S5 VDS RDS(on) ID 600 V 0.38 Ω 11 A PG-TO262 P |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-T |
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Infineon |
MOSFET •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation Qualifiedacco |
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Infineon |
MOSFET • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified according to JEDEC Standard Tab |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 • |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-T |
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Infineon |
MOSFET •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortarg |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-T |
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Infineon |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halo |
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Infineon Technologies |
Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application |
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Infineon |
Silicon Germanium 24GHz Radar Transceiver MMIC ...............................................................................................................................................5 2 Electrical Characteristics ............................................................................ |
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Infineon |
Power MOSFET • Optimized for high performance buck converter • 175°C rated • Very low on‑resistance RDS(on) @ VGS=4.5 V • 100% avalanche tested • Superior thermal resistance • N‑channel • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2 |
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Infineon |
Power MOSFET •OptimizedforhighperformanceSMPS •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications |
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Infineon |
Dual N-Channel OptiMOS MOSFET Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.5V rated) VDS RDS(on),max • N-channel ID • Qualified according to JEDEC1) for target applications VGS=10 V VGS=4.5 V • Pb-free lea |
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