BSC0911ND |
Part Number | BSC0911ND |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.5V rated) VDS RDS(on),max • N-channel ID •... |
Features |
Product Summary
• Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.5V rated) VDS RDS(on),max • N-channel ID • Qualified according to JEDEC1) for target applications VGS=10 V VGS=4.5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 VPhase BSC0911ND Q1 Q2 25 25 V 3.2 1.2 mW 4.8 1.7 40 40 A Type BSC0911ND Package PG-TISON-8 Marking 0911ND Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Symbol Conditions Continuous drain current Pulsed drain current5) Avalanche energy, single puls... |
Document |
BSC0911ND Data Sheet
PDF 645.06KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC0910NDI |
Infineon |
Dual N-Channel OptiMOS MOSFET | |
2 | BSC0901NS |
Infineon Technologies |
N-Channel Power MOSFET | |
3 | BSC0901NSI |
Infineon Technologies |
n-Channel Power MOSFET | |
4 | BSC0902NS |
Infineon Technologies |
N-Channel Power MOSFET | |
5 | BSC0902NSI |
Infineon |
MOSFET |