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SPI11N60C3 |
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| Part Number | SPI11N60C3 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanch... |
| Features |
z) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7)
ID
ID puls EAS
EAR
IAR VGS VGS Ptot Tj , Tstg dv/dt
11
111)
7
71)
33
33
340
340
0.6
0.6
11
11
±20
±20
±30
±30
125
33
-55...+150
15
Unit A
A mJ
A V W °C V/ns
Rev. 3.3
Page 1
2018-02-09
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, lead... |
| Document |
 SPI11N60C3 Data Sheet
PDF 678.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPI11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPI11N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPI11N60CFD |
Infineon Technologies |
Power-Transistor |
|
| 4 | SPI11N60S5 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPI11N60S5 |
INCHANGE |
N-Channel MOSFET |
|