IPI111N15N3 |
Part Number | IPI111N15N3 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Su... |
Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification •Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package Marking PG-TO263 108N15N PG-TO220-3 111N15N PG-TO262-3 111N15N Maximum ratings, at T j=25 °C, unless otherwise sp... |
Document |
IPI111N15N3 Data Sheet
PDF 732.59KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPI111N15N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPI111N15N3G |
Infineon Technologies |
Power Transistor | |
3 | IPI110N20N3 |
Infineon |
Power-Transistor | |
4 | IPI110N20N3 |
INCHANGE |
N-Channel MOSFET | |
5 | IPI110N20N3G |
Infineon Technologies |
Power Transistor |