IPI111N15N3 Infineon Power-Transistor Datasheet, en stock, prix

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IPI111N15N3

Infineon
IPI111N15N3
IPI111N15N3 IPI111N15N3
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Part Number IPI111N15N3
Manufacturer Infineon (https://www.infineon.com/)
Description IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Su...
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package Marking PG-TO263 108N15N PG-TO220-3 111N15N PG-TO262-3 111N15N Maximum ratings, at T j=25 °C, unless otherwise sp...

Document Datasheet IPI111N15N3 Data Sheet
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