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Inchange Semiconductor |
Silicon NPN Power Transistor otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 30mA 1.5 V ICBO Collector Cutoff Current VCB= 60V; |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor ETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 100mA V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50 |
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Inchange Semiconductor |
Silicon NPN Power Transistor tor 2SD2161 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 2mA ICBO Collector Cutof |
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Inchange Semiconductor |
Silicon PNP Power Transistor Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJD210 MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustai |
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Inchange Semiconductor |
Silicon NPN Power Transistor mitter Saturation Voltage IC= 7A; IB= 0.7A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 4A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V fT Current-Gain—Bandwidth P |
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Inchange Semiconductor |
Power Transistor ified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter S |
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Inchange Semiconductor |
Power Transistor ied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Sat |
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Inchange Semiconductor |
Power Transistor (sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base -Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V |
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Inchange Semiconductor |
Power Transistor SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturat |
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Inchange Semiconductor |
Power Transistor ied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Sat |
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Inchange Semiconductor |
Power Transistor VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V Base -Emitter On Voltage IC= 5A; VCE= 5V 1.8 V μA μA Collector Cutoff Current VCB= 140V; IE= 0 50 IEBO hFE-1 Emitter Cutoff Current VEB= 3V; IC= 0 IC= |
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Inchange Semiconductor |
2SD2110 herwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage I |
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