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2SD2102 |
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| Part Number | 2SD2102 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAX... |
| Features |
... |
| Document |
 2SD2102 Data Sheet
PDF 154.89KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2100 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SD2101 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD2101 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD2101 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2102 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|