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2SD2128 |
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| Part Number | 2SD2128 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V ·Minimum Lo... |
| Features |
ied
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 3mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1.5A; IB= 3mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 3A; IB= 30mA
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
ICEO
Collector Cutoff Current
VCE= 50V; RBE= ∞
hFE
DC Current Gain
IC=... |
| Document |
 2SD2128 Data Sheet
PDF 197.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2120 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SD2121 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 3 | 2SD2121L |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 4 | 2SD2121S |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 5 | 2SD2122 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|