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2SD218 |
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| Part Number | 2SD218 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and... |
| Features |
mitter Saturation Voltage
IC= 7A; IB= 0.7A
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A; VCE= 5V
hFE-2
DC Current Gain
IC= 7A; VCE= 5V
fT
Current-Gain—Bandwidth Product
hFE-1Classifications M L K IC= 0.2A; VCE= 10V 30-60 45-90 60-120 2SD218 MIN TYP. MAX UNIT 0.6 1.5 V 1.2 1.5 V 0.5 mA 0.5 mA 30 60 120 20 40 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a ... |
| Document |
 2SD218 Data Sheet
PDF 208.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2100 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SD2101 |
Hitachi Semiconductor |
Silicon NPN Transistor |
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| 3 | 2SD2101 |
SavantIC |
SILICON POWER TRANSISTOR |
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| 4 | 2SD2101 |
INCHANGE |
NPN Transistor |
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| 5 | 2SD2102 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|