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2SD2161 |
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| Part Number | 2SD2161 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA) ·Mini... |
| Features |
tor
2SD2161
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 2mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
hFE-1
DC Current Gain
IC= 2A; VCE= 2V
hFE-2
DC Current Gain
IC= 4A; VCE= 2V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
MIN TYP. MAX UNIT
1.5
V
2.0
V
1.0
μA
2000 8000 20000
500
30
MHz
35
pF
hFE-1 Classifications M L K 2000-5000 4... |
| Document |
 2SD2161 Data Sheet
PDF 200.47KB |
| Distributor | Stock | Price | Buy |
|---|
