Inchange Semiconductor BD2 fiche technique

No.	Partie #	Fabricant	Description
1	BD243	Inchange Semiconductor	Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V
2	BD243A	Inchange Semiconductor	Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V
3	BD202	Inchange Semiconductor	Silicon PNP Power Transistor , Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdo
4	BD245D	Inchange Semiconductor	Silicon NPN Power Transistor emark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=
5	BD243B	Inchange Semiconductor	Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V
6	BD243C	Inchange Semiconductor	Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V
7	BD237	Inchange Semiconductor	Silicon NPN Power Transistors isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W ELECTRICAL CHAR
8	BD234	Inchange Semiconductor	Silicon PNP Power Transistor red trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD234/236/238 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W E
9	BD204	Inchange Semiconductor	Silicon PNP Power Transistor , Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdo
10	BD236	Inchange Semiconductor	Silicon PNP Power Transistor red trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD234/236/238 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W E
11	BD201	Inchange Semiconductor	Silicon NPN Power Transistor to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakd
12	BD203	Inchange Semiconductor	Silicon NPN Power Transistor to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakd
13	BD263	Inchange Semiconductor	Silicon NPN Power Transistor e specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V ICEO Collector Cutoff Cur
14	BD235	Inchange Semiconductor	Silicon NPN Power Transistors isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W ELECTRICAL CHAR
15	BD233	Inchange Semiconductor	Silicon NPN Power Transistors isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W ELECTRICAL CHAR
16	BD238	Inchange Semiconductor	Silicon PNP Power Transistor red trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD234/236/238 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W E