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BD236 |
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| Part Number | BD236 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD233/235/237 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~... |
| Features |
red trademark
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD234/236/238
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 5
100
UNIT ℃/W ℃/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD234
-45
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD236 IC= -50mA ; IB= 0
-60
V
BD238
-80
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB= -0.1A
-0.6 V
VBE(on) ICBO IEBO
Base-Emitter On Voltage Collector Cuto... |
| Document |
 BD236 Data Sheet
PDF 188.74KB |
| Distributor | Stock | Price | Buy |
|---|
