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BD237 |
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| Part Number | BD237 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD234/236/238 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~1... |
| Features |
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD233/235/237
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 5
100
UNIT ℃/W ℃/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD233 BD235 BD237
IC= 50mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A
VBE(on) ICBO IEBO
Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current
IC= 1.0A; VCE= 2V
VCB= VCBOma... |
| Document |
 BD237 Data Sheet
PDF 188.83KB |
| Distributor | Stock | Price | Buy |
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