BD203 |
Part Number | BD203 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202/204 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
Features |
to Ambient 70 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter Breakdown Voltage
BD201 BD203
IC= 50mA ;IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ;IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
... |
Document |
BD203 Data Sheet
PDF 211.40KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BD201 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | BD201 |
Comset Semiconductors |
SILCON EPITAXIAL-BASE POWER TRANSISTORS | |
3 | BD201F |
INCHANGE |
NPN Transistor | |
4 | BD202 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
5 | BD202 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |