| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.09Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS( |
|
|
|
|
INCHANGE |
P-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching appl |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 250mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semi |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·LED backlighting ·Power sup |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤3.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
|
|
|
|
INCHANGE |
P-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS( |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.77Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(T |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switc |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variet |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION · Efficient and reliable device for use |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.1Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Reliable device for use in a wide varie |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 130mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power s |
|
|
|
|
INCHANGE |
P-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching appl |
|