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CSD30N30 |
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| Part Number | CSD30N30 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor CSD30N30 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum... |
| Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 110 78 440 PD Total Dissipation @TC=25℃ 107 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 U... |
| Document |
 CSD30N30 Data Sheet
PDF 203.61KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CSD30N30 |
CASS |
N-Channel Trench Power MOSFET |
|
| 2 | CSD30N39 |
CASS |
N-Channel Trench Power MOSFET |
|
| 3 | CSD30N210 |
CASS |
N-Channel Trench Power MOSFET |
|
| 4 | CSD30N55 |
CASS |
N-Channel Trench Power MOSFET |
|
| 5 | CSD3080H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/800 Volts |
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