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IRF630N |
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| Part Number | IRF630N |
| Manufacturer | INCHANGE |
| Description | · Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION · Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.3 IDM Drain Current-Single Pulsed 37 PD Total Dissipation @TC=25℃ 82 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 ... |
| Document |
 IRF630N Data Sheet
PDF 241.39KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF630 |
STMicroelectronics |
N-channel MOSFET |
|
| 2 | IRF630 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
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| 3 | IRF630 |
Vishay |
Power MOSFET |
|
| 4 | IRF630 |
Inchange Semiconductor |
N-channel mosfet transistor |
|
| 5 | IRF630 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|