IRL530NS |
Part Number | IRL530NS |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor IRL530NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations... |
Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±16 17 12 60 PD Total Dissipation @TC=25℃ 79 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHAR... |
Document |
IRL530NS Data Sheet
PDF 253.99KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | IRL530N |
IRF |
HEXFET Power MOSFET | |
2 | IRL530N |
INCHANGE |
N-Channel MOSFET | |
3 | IRL530NL |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRL530NL |
INCHANGE |
N-Channel MOSFET | |
5 | IRL530NLPbF |
International Rectifier |
Power MOSFET |