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IRF530N |
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| Part Number | IRF530N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.09Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.09Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 70 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ... |
| Document |
 IRF530N Data Sheet
PDF 240.73KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF530 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 2 | IRF530 |
Motorola Inc |
N-Channel MOSFET |
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| 3 | IRF530 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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| 4 | IRF530 |
International Rectifier |
Power MOSFET |
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| 5 | IRF530 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|