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IRF9530NL |
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| Part Number | IRF9530NL |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot varia... |
| Features |
·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance IRF9530NL V... |
| Document |
 IRF9530NL Data Sheet
PDF 224.81KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF9530N |
International Rectifier |
Power MOSFET |
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| 2 | IRF9530N |
INCHANGE |
P-Channel MOSFET |
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| 3 | IRF9530NL |
International Rectifier |
Power MOSFET |
|
| 4 | IRF9530NLPbF |
Infineon |
Power MOSFET |
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| 5 | IRF9530NLPBF |
International Rectifier |
Power MOSFET |
|