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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Abso |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Abso |
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Huajing Microelectronics |
Precision primary side feedback LED constant current drive circuit 1 ， T amb = 25 ℃ （ CS ， ZCD ） ESD （ HBM ） 3. 2 ， T amb = 25 ℃ ， V CC =12V V OP V ON V OFF V OVP V CLAMP I ST I SUPPLY V CS_TH T LEB T DELAY ZCD V ZCD V ZCD_CLAMP T OFF_MIN R DS_ON V BRD I D_SS T OTP T OTP_HYS 160 30 ℃ ℃ V GS = |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25 |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Abso |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Abso |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： CRT、TV/Monitor and Lighting. Absolute（Tc= 25℃ unless ot |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 6A 85 W 1.4 Ω Applications： |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolut |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:15.5nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25 |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25 |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absol |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 6A 85 W 1.4 Ω Applications |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data:57nC) l Low Reverse transfer capacitances(Typical:180pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute |
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Huajing Microelectronics |
Non-isolated LED driver circuit ZCD |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： CRT、TV/Monitor and Lighting. Absolute（Tc= 25℃ unless ot |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 2 |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:15.5nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25 |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ |
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