CS630FA9H |
Part Number | CS630FA9H |
Manufacturer | Huajing Microelectronics |
Description | CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 30 0.... |
Features |
l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test
Applications:
Automotive、DC Motor Control and Class D Amplifier.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 ... |
Document |
CS630FA9H Data Sheet
PDF 712.27KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS630F |
ETC |
VDMOS transistor | |
2 | CS630 |
IXYS Corporation |
Phase Control Thyristor | |
3 | CS630A3H |
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Silicon N-Channel Power MOSFET | |
4 | CS630A4H |
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Silicon N-Channel Power MOSFET | |
5 | CS630A8H |
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Silicon N-Channel Power MOSFET |