CS6N60A4H |
Part Number | CS6N60A4H |
Manufacturer | Huajing Microelectronics |
Description | CS6N60 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energ... |
Features |
l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 V 6A 85 W 1.4 Ω
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Puls... |
Document |
CS6N60A4H Data Sheet
PDF 305.91KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS6N60A4D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS6N60A4TY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS6N60A3D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS6N60A3HDY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS6N60A3TY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |