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CS630A4H |
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| Part Number | CS630A4H |
| Manufacturer | Huajing Microelectronics |
| Description | CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) ... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C ... |
| Document |
 CS630A4H Data Sheet
PDF 836.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CS630A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
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| 2 | CS630A8H |
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Silicon N-Channel Power MOSFET |
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| 3 | CS630 |
IXYS Corporation |
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| 4 | CS630D |
BLUE ROCKET ELECTRONICS |
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| 5 | CS630F |
ETC |
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