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CS6N60FA9TY |
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| Part Number | CS6N60FA9TY |
| Manufacturer | Huajing Microelectronics |
| Description | CS6N60F A9TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single ... |
| Document |
 CS6N60FA9TY Data Sheet
PDF 413.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CS6N60FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS6N60FA9H-G |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS6N60F |
LZG |
N-Channel MOSFET |
|
| 4 | CS6N60F |
ETC |
VDMOS |
|
| 5 | CS6N60 |
ETC |
VDMOS |
|