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CS6N60A4D |
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| Part Number | CS6N60A4D |
| Manufacturer | Huajing Microelectronics |
| Description | CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 95 1.... |
| Features |
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulse... |
| Document |
 CS6N60A4D Data Sheet
PDF 351.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CS6N60A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS6N60A4TY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS6N60A3D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 4 | CS6N60A3HDY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS6N60A3TY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|